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G Skill Intl F3-14900CL8-4GBXM 4GB
InnoDisk Corporation M4C0-AGS1TCIK 16GB

G Skill Intl F3-14900CL8-4GBXM 4GB vs InnoDisk Corporation M4C0-AGS1TCIK 16GB

总分
star star star star star
G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

总分
star star star star star
InnoDisk Corporation M4C0-AGS1TCIK 16GB

InnoDisk Corporation M4C0-AGS1TCIK 16GB

差异 规格 评论

差异

G Skill Intl F3-14900CL8-4GBXM 4GB 需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 32
    左右 3% 更低的延时
InnoDisk Corporation M4C0-AGS1TCIK 16GB 需要考虑的原因
InnoDisk Corporation M4C0-AGS1TCIK 16GB
报告一个错误
  • 更快的读取速度，GB/s
    18.3 left arrow 17.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.9 left arrow 10.9
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
G Skill Intl F3-14900CL8-4GBXM 4GB
InnoDisk Corporation M4C0-AGS1TCIK 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    31 left arrow 32
  • 读取速度，GB/s
    17.4 left arrow 18.3
  • 写入速度，GB/s
    10.9 left arrow 14.9
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2735 left arrow 3149

G Skill Intl F3-14900CL8-4GBXM 4GB RAM的比较

Corsair CMD32GX3M4A2400C10 8GB
Corsair CMY16GX3M2A2400C10 8GB

InnoDisk Corporation M4C0-AGS1TCIK 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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A-DATA Technology DQVE1908 512MB
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Corsair CMT128GX4M8X3600C18 16GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology CT4G4DFS8213.C8FHP 4GB
Crucial Technology CT4G4DFS8213.C8FHP 4GB
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Samsung M471B5773DH0-CK0 2GB
Samsung M471B5773DH0-CK0 2GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
Corsair CMK32GX4M2C3200C18 16GB
Corsair CMK32GX4M2C3200C18 16GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Corsair CMD128GX4M8B3200C16 16GB
Corsair CMD128GX4M8B3200C16 16GB
内存RAM
Kingston KHX2666C13/8GX 8GB
Kingston KHX2666C13/8GX 8GB
Crucial Technology BL8G32C16U4B.M8FE1 8GB
Crucial Technology BL8G32C16U4B.M8FE1 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology CT8G4SFS824A.C8FHD1 8GB
Crucial Technology CT8G4SFS824A.C8FHD1 8GB
内存RAM
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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
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Kingston 9905744-035.A00G 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
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Kingston 9905599-026.A00G 8GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Gold Key Technology Co Ltd GKE800UD102408-2666 8GB
Gold Key Technology Co Ltd GKE800UD102408-2666 8GB
内存RAM
Kingston 99U5429-007.A00LF 2GB
Kingston 99U5429-007.A00LF 2GB
Chun Well Technology Holding Limited MD4U1632160DCW 16GB
Chun Well Technology Holding Limited MD4U1632160DCW 16G
内存RAM
Samsung M393B1K70CH0-YH9 8GB
Samsung M393B1K70CH0-YH9 8GB
Transcend Information TS512MSH64V1H 4GB
Transcend Information TS512MSH64V1H 4GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Golden Empire CL15-17-17 D4-2666 8GB
Golden Empire CL15-17-17 D4-2666 8GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMT16GX4M2C3200C16 8GB
Corsair CMT16GX4M2C3200C16 8GB
内存RAM