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G Skill Intl F3-14900CL8-4GBXM 4GB
Wilk Elektronik S.A. GR2400S464L17/16G 16GB
比较
G Skill Intl F3-14900CL8-4GBXM 4GB vs Wilk Elektronik S.A. GR2400S464L17/16G 16GB
总分
G Skill Intl F3-14900CL8-4GBXM 4GB
总分
Wilk Elektronik S.A. GR2400S464L17/16G 16GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F3-14900CL8-4GBXM 4GB
报告一个错误
低于PassMark测试中的延时,ns
31
40
左右 23% 更低的延时
更快的读取速度,GB/s
17.4
16.1
测试中的平均数值
需要考虑的原因
Wilk Elektronik S.A. GR2400S464L17/16G 16GB
报告一个错误
更快的写入速度,GB/s
13.6
10.9
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
G Skill Intl F3-14900CL8-4GBXM 4GB
Wilk Elektronik S.A. GR2400S464L17/16G 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
31
40
读取速度,GB/s
17.4
16.1
写入速度,GB/s
10.9
13.6
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2735
3028
G Skill Intl F3-14900CL8-4GBXM 4GB RAM的比较
Corsair CMD32GX3M4A2400C10 8GB
Corsair CMY16GX3M2A2400C10 8GB
Wilk Elektronik S.A. GR2400S464L17/16G 16GB RAM的比较
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology BLS16G4D30AESB.M16FE 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS8G4D240FSCK.8FD 8GB
Samsung M471B5673FH0-CF8 2GB
V-Color Technology Inc. TA48G30S815GK 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology CT32G4DFD8266.C16FE 32GB
Kingston K531R8-MIN 4GB
Kingston 9905624-043.A00G 8GB
Samsung M393B2G70BH0-CK0 16GB
Kingston ACR32D4S2S1ME-8 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Wilk Elektronik S.A. GR2400S464L17/16G 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
SK Hynix HMA84GR7AFR4N-VK 32GB
Kingston 9905458-017.A01LF 4GB
Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Micron Technology 16G2666CL19 16GB
Kingston KVR16N11/8-SP 8GB
Corsair CMT64GX4M8X3600C18 8GB
Kingston 9965525-140.A00LF 8GB
Shenzhen Micro Innovation Industry PSD41626D19P1 16GB
Samsung M3 93T5750CZA-CE6 2GB
Thermaltake Technology Co Ltd R009D408GX2-3200C16A 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Kingston MSISID4S9S8ME-8 8GB
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