G Skill Intl F3-1600C11-8GIS 8GB vs Crucial Technology BLS8G4D240FSEK.8FBR 8GB

总分

G Skill Intl F3-1600C11-8GIS 8GB

G Skill Intl F3-1600C11-8GIS 8GB

总分

Crucial Technology BLS8G4D240FSEK.8FBR 8GB

Crucial Technology BLS8G4D240FSEK.8FBR 8GB

差异规格评论

差异

G Skill Intl F3-1600C11-8GIS 8GB

需要考虑的原因
G Skill Intl F3-1600C11-8GIS 8GB

报告一个错误

更快的读取速度，GB/s

14.5 12.9

测试中的平均数值
更快的写入速度，GB/s

9.3 5.9

测试中的平均数值

Crucial Technology BLS8G4D240FSEK.8FBR 8GB

需要考虑的原因
Crucial Technology BLS8G4D240FSEK.8FBR 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 40

左右 -60% 更低的延时
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-1600C11-8GIS 8GB

Crucial Technology BLS8G4D240FSEK.8FBR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

40 25
读取速度，GB/s

14.5 12.9
写入速度，GB/s

9.3 5.9
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2513 2051

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Samsung M3 78T2863QZS-CF7 1GB

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Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB

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Corsair CMK8GX4M2A2666C16 4GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Crucial Technology CT16G4DFD8266.C16FE 16GB

Crucial Technology CT16G4DFD8266.C16FE 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Corsair CMD16GX4M4B2400C10 4GB

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Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

Samsung M4 70T5663QZ3-CE6 2GB

Samsung M4 70T5663QZ3-CE6 2GB

Samsung M392A4K40BM0-CRC 32GB

Samsung M392A4K40BM0-CRC 32GB