G Skill Intl F3-2133C9-4GAB 4GB vs Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

总分

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

总分

Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

差异规格评论

差异

G Skill Intl F3-2133C9-4GAB 4GB

需要考虑的原因
G Skill Intl F3-2133C9-4GAB 4GB

报告一个错误

Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

需要考虑的原因
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 36

左右 -57% 更低的延时
更快的读取速度，GB/s

17 16.4

测试中的平均数值
更快的写入速度，GB/s

12.9 11.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2133C9-4GAB 4GB

Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

36 23
读取速度，GB/s

16.4 17.0
写入速度，GB/s

11.0 12.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 12 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2729 2938

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 8ATF1G64HZ-2G6B1 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Corsair CMT16GX4M2C3000C15 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Kllisre M471A3243BB0-CP50 16GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Crucial Technology CT16G4DFD832A.M16FJ 16GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Corsair CM4X16GE2666C16K2 16GB

Corsair CM4X16GE2666C16K2 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Samsung M378A2K43BB1-CRC 16GB

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Samsung M471B5173QH0-YK0 4GB

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Crucial Technology CT4G4DFS8266.M8FE 4GB

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A-DATA Technology DDR3 1600 4GB

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Hewlett-Packard 7EH67AA# 8GB

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