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G Skill Intl F3-2666C12-8GTXD 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
比较
G Skill Intl F3-2666C12-8GTXD 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
总分
G Skill Intl F3-2666C12-8GTXD 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
差异
规格
评论
差异
需要考虑的原因
G Skill Intl F3-2666C12-8GTXD 8GB
报告一个错误
低于PassMark测试中的延时,ns
28
122
左右 77% 更低的延时
更快的读取速度,GB/s
18.2
9.4
测试中的平均数值
更快的写入速度,GB/s
11.5
5.8
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
报告一个错误
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
G Skill Intl F3-2666C12-8GTXD 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
122
读取速度,GB/s
18.2
9.4
写入速度,GB/s
11.5
5.8
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
3067
1411
G Skill Intl F3-2666C12-8GTXD 8GB RAM的比较
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C11-8GTXD 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N-UH 4GB RAM的比较
A-DATA Technology AD73I1C1674EV 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F3-2666C12-8GTXD 8GB
Hynix Semiconductor (Hyundai Electronics) HMA851U6AFR6N
Samsung M3 78T2863EHS-CF7 1GB
Micron Technology 8ATF2G64HZ-2G3A1 16GB
Kingston KVR533D2N4 512MB
Gold Key Technology Co Ltd GKE160SO102408-2400 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Corsair CMW64GX4M2D3600C18 32GB
AMD R5316G1609U2K 8GB
G Skill Intl F4-3200C14-16GTRG 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CMK16GX4M2L3000C15 8GB
Samsung M471A5244CB0-CWE 4GB
Kingston KC5N22-MIE 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston KCRXJ6-HYJ 16GB
Kingston 9905403-090.A01LF 4GB
Micron Technology 18ADF2G72AZ-2G6E1 16GB
Corsair CMY16GX3M4A2133C8 4GB
Crucial Technology CT8G4DFS8213.C8FDD1 8GB
Kingston KHX1600C9D3/8G 8GB
Crucial Technology BL8G32C16U4BL.M8FE1 8GB
Samsung M393B1G70BH0-CK0 8GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CMH32GX4M4D3600C18 8GB
Samsung M393B2G70BH0-CH9 16GB
Crucial Technology BLM16G44C19U4BL.M8FB 16GB
报告一个错误
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Bug description
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