G Skill Intl F3-2800C12-8GTXDG 8GB vs AMD R748G2133U2S-UO 8GB

总分

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

总分

AMD R748G2133U2S-UO 8GB

AMD R748G2133U2S-UO 8GB

差异规格评论

差异

G Skill Intl F3-2800C12-8GTXDG 8GB

需要考虑的原因
G Skill Intl F3-2800C12-8GTXDG 8GB

报告一个错误

低于PassMark测试中的延时，ns

21 25

左右 16% 更低的延时
更快的读取速度，GB/s

17.4 15

测试中的平均数值
更快的写入速度，GB/s

12.2 12.0

测试中的平均数值

AMD R748G2133U2S-UO 8GB

需要考虑的原因
AMD R748G2133U2S-UO 8GB

报告一个错误

更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

G Skill Intl F3-2800C12-8GTXDG 8GB

AMD R748G2133U2S-UO 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

21 25
读取速度，GB/s

17.4 15.0
写入速度，GB/s

12.2 12.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3130 2600

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5773DH0-CH9 2GB

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Micron Technology 18ASF2G72AZ-2G3B1 16GB

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Samsung M471B5173EB0-YK0 4GB

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Kingston CAC24D4S7D8MB-16 16GB

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TwinMOS 8DHE3MN8-HATP 2GB

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Crucial Technology BL16G32C16S4B.8FB 16GB

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Micron Technology 16KTF1G64HZ-1G6E1 8GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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SK Hynix GKE800SO51208-2133AH 8GB

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G Skill Intl F4-2800C14-16GVK 16GB

G Skill Intl F4-2800C14-16GVK 16GB

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Corsair CM4X8GD3000C16K4D 8GB

Corsair CM4X8GD3000C16K4D 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

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Avant Technology J644GU44J2320NF 32GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

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Samsung M386A4K40BB0-CRC 32GB

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Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

A-DATA Technology AO1P26KC8T1-BXPS 8GB

A-DATA Technology AO1P26KC8T1-BXPS 8GB