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G Skill Intl F5-5600J4040C16G 16GB
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB

G Skill Intl F5-5600J4040C16G 16GB vs Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB

总分
star star star star star
G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

总分
star star star star star
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB

Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB

差异 规格 评论

差异

G Skill Intl F5-5600J4040C16G 16GB 需要考虑的原因
G Skill Intl F5-5600J4040C16G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 24
    左右 8% 更低的延时
  • 更快的读取速度，GB/s
    14.9 left arrow 13.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.5 left arrow 6.5
    测试中的平均数值
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB 需要考虑的原因
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
报告一个错误

规格

完整的技术规格清单
G Skill Intl F5-5600J4040C16G 16GB
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
主要特点
  • 存储器类型
    DDR5 left arrow DDR4
  • PassMark中的延时，ns
    22 left arrow 24
  • 读取速度，GB/s
    14.9 left arrow 13.9
  • 写入速度，GB/s
    13.5 left arrow 6.5
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC5-19200, 1.1V, CAS Supported: 22 28 30 32 36 40 42 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    no data / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    3679 left arrow 2113

G Skill Intl F5-5600J4040C16G 16GB RAM的比较

Kingston 99U5701-036.A00G 16GB
Kingston 9905701-132.A00G 16GB

Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
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Crucial Technology BLS16G4S240FSD.16FAD 16GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
内存RAM
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内存RAM
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Micron Technology 16A6A2G64HZ-2-2E1 16GB
内存RAM
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内存RAM
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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
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SK Hynix HMA451R7MFR8N-TF 4GB
内存RAM
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F3-12800CL7-4GBXM 4GB
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Essencore Limited KD48GU88C-26N190A 8GB
内存RAM
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G Skill Intl F4-3200C14-8GTZ 8GB
内存RAM
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Samsung M393B2G70BH0-CK0 16GB
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G Skill Intl F4-3200C16-8GVR 8GB
内存RAM
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内存RAM
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内存RAM
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内存RAM
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Kingston XCCT36-MIE 16GB
内存RAM
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Samsung M3 78T5663RZ3-CE6 2GB
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Kingston KHX2400C14/16G 16GB
内存RAM