G Skill Intl F5-5600J4040C16G 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB

G Skill Intl F5-5600J4040C16G 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB

总分
star star star star star
G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB

差异

  • 低于PassMark测试中的延时,ns
    22 left arrow 29
    左右 24% 更低的延时
  • 更快的读取速度,GB/s
    14.9 left arrow 13.6
    测试中的平均数值
  • 更快的写入速度,GB/s
    13.5 left arrow 9.9
    测试中的平均数值
  • 更高的内存带宽,mbps
    19200 left arrow 17000
    左右 1.13% 更高的带宽

规格

完整的技术规格清单
G Skill Intl F5-5600J4040C16G 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N-TF 16GB
主要特点
  • 存储器类型
    DDR5 left arrow DDR4
  • PassMark中的延时,ns
    22 left arrow 29
  • 读取速度,GB/s
    14.9 left arrow 13.6
  • 写入速度,GB/s
    13.5 left arrow 9.9
  • 内存带宽,mbps
    19200 left arrow 17000
Other
  • 描述
    PC5-19200, 1.1V, CAS Supported: 22 28 30 32 36 40 42 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    no data / 2400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3679 left arrow 2419
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最新比较