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Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-2133C15-8GSQ 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB vs G Skill Intl F4-2133C15-8GSQ 8GB

总分
star star star star star
Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

总分
star star star star star
G Skill Intl F4-2133C15-8GSQ 8GB

G Skill Intl F4-2133C15-8GSQ 8GB

差异 规格 评论

差异

Golden Empire 1GB DDR2 800 CAS=4 1GB 需要考虑的原因
Golden Empire 1GB DDR2 800 CAS=4 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,066.5 left arrow 12.0
    测试中的平均数值
G Skill Intl F4-2133C15-8GSQ 8GB 需要考虑的原因
G Skill Intl F4-2133C15-8GSQ 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 49
    左右 -104% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-2133C15-8GSQ 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    49 left arrow 24
  • 读取速度，GB/s
    4,577.1 left arrow 15.7
  • 写入速度，GB/s
    2,066.5 left arrow 12.0
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    737 left arrow 2618

Golden Empire 1GB DDR2 800 CAS=4 1GB RAM的比较

Samsung M395T5663QZ4-CE66 1GB
Kingston TCM633-QAC 1GB

G Skill Intl F4-2133C15-8GSQ 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Crucial Technology CT102464BA160B.M16 8GB
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Kingston ACR512X64D3S13C9G 4GB
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内存RAM
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G Skill Intl F4-3300C16-8GTZ 8GB
内存RAM
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Samsung M391B5673EH1-CH9 2GB
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Essencore Limited KD4AGU880-32A160T 16GB
内存RAM
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内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
SK Hynix HMA41GR7AFR8N-UH 8GB
SK Hynix HMA41GR7AFR8N-UH 8GB
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