Golden Empire CL5-5-5DDR2 1GB vs Patriot Memory (PDP Systems) 2400 C16 Series 16GB

总分

Golden Empire CL5-5-5DDR2 1GB

Golden Empire CL5-5-5DDR2 1GB

总分

Patriot Memory (PDP Systems) 2400 C16 Series 16GB

Patriot Memory (PDP Systems) 2400 C16 Series 16GB

差异规格评论

差异

Golden Empire CL5-5-5DDR2 1GB

需要考虑的原因
Golden Empire CL5-5-5DDR2 1GB

报告一个错误

更快的读取速度，GB/s

4 15.6

测试中的平均数值
更快的写入速度，GB/s

2,001.7 10.6

测试中的平均数值

Patriot Memory (PDP Systems) 2400 C16 Series 16GB

需要考虑的原因
Patriot Memory (PDP Systems) 2400 C16 Series 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 45

左右 -45% 更低的延时
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Golden Empire CL5-5-5DDR2 1GB

Patriot Memory (PDP Systems) 2400 C16 Series 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

45 31
读取速度，GB/s

4,776.5 15.6
写入速度，GB/s

2,001.7 10.6
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

669 2837

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Golden Empire CL5-5-5DDR2 1GB

Golden Empire CL5-5-5DDR2 1GB

Patriot Memory (PDP Systems) 2400 C16 Series 16GB

Patriot Memory (PDP Systems) 2400 C16 Series 16GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

A-DATA Technology DDR4 2133 2OZ 8GB

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A-DATA Technology DDR2 800G 2GB

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Kingston LV36D4U1S8HD-8XR 8GB

Kingston LV36D4U1S8HD-8XR 8GB

A-DATA Technology ADOVE1A0834E 1GB

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Patriot Memory (PDP Systems) 2400 C16 Series 16GB

Patriot Memory (PDP Systems) 2400 C16 Series 16GB

G Skill Intl F4-3600C16-8GTZKK 8GB

G Skill Intl F4-3600C16-8GTZKK 8GB

A-DATA Technology DDR4 2666 2OZ 4GB

A-DATA Technology DDR4 2666 2OZ 4GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

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G Skill Intl F4-2400C17-8GNT 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology BLM16G40C18U4B.M8FB1 16GB

Crucial Technology BLM16G40C18U4B.M8FB1 16GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA81GS6JJR8N

A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

G Skill Intl F4-2133C15-16GRS 16GB

G Skill Intl F4-2133C15-16GRS 16GB

Kllisre DDR4-8GB 8GB

Kllisre DDR4-8GB 8GB

Patriot Memory (PDP Systems) 2666 C16 Series 8GB

Patriot Memory (PDP Systems) 2666 C16 Series 8GB

Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

A-DATA Technology DDR3 1333G 2GB

A-DATA Technology DDR3 1333G 2GB

Samsung M471A2K43CB1-CRCR 16GB

Samsung M471A2K43CB1-CRCR 16GB

Crucial Technology CT8G48C40U5.M4A1 8GB

Crucial Technology CT8G48C40U5.M4A1 8GB

Crucial Technology CT16G4SFD824A.C16FBD 16GB

Crucial Technology CT16G4SFD824A.C16FBD 16GB