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Hexon Technology Pte Ltd HEXON 1GB
Corsair CMK8GX4M2A2666C16 4GB

Hexon Technology Pte Ltd HEXON 1GB vs Corsair CMK8GX4M2A2666C16 4GB

总分
star star star star star
Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分
star star star star star
Corsair CMK8GX4M2A2666C16 4GB

Corsair CMK8GX4M2A2666C16 4GB

差异 规格 评论

差异

Hexon Technology Pte Ltd HEXON 1GB 需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 15.7
    测试中的平均数值
Corsair CMK8GX4M2A2666C16 4GB 需要考虑的原因
Corsair CMK8GX4M2A2666C16 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 62
    左右 -100% 更低的延时
  • 更快的写入速度，GB/s
    11.5 left arrow 1,843.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMK8GX4M2A2666C16 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    62 left arrow 31
  • 读取速度，GB/s
    3,556.6 left arrow 15.7
  • 写入速度，GB/s
    1,843.6 left arrow 11.5
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    542 left arrow 2787

Hexon Technology Pte Ltd HEXON 1GB RAM的比较

SpecTek Incorporated CONQUR6672GB-A023- 2GB
Qimonda 72T512220EP3SC2 4GB

Corsair CMK8GX4M2A2666C16 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Corsair CMK8GX4M2A2666C16 4GB
Corsair CMK8GX4M2A2666C16 4GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
内存RAM
Golden Empire 1GB DDR2 800 CAS=4 1GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
Micron Technology 8ATF2G64AZ-3G2E1 16GB
内存RAM
Kingston MSI16D3LS1MNG/8G 8GB
Kingston MSI16D3LS1MNG/8G 8GB
Kingston MSI24D4U7S8MH-8 8GB
Kingston MSI24D4U7S8MH-8 8GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
Crucial Technology CT8G4SFS824A.C8FJ 8GB
Crucial Technology CT8G4SFS824A.C8FJ 8GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Crucial Technology BLT16G4D30BET4.C16FD 16GB
Crucial Technology BLT16G4D30BET4.C16FD 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
G Skill Intl F4-2800C15-16GRKD 16GB
G Skill Intl F4-2800C15-16GRKD 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Corsair CMD16GX4M2C3333C16 8GB
Corsair CMD16GX4M2C3333C16 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Samsung M471A1K43CBCBCRC 8GB
Samsung M471A1K43CBCBCRC 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Corsair CMK8GX4M2B4133C19 4GB
Corsair CMK8GX4M2B4133C19 4GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB
Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
G Skill Intl F4-3300C16-8GTZSW 8GB
G Skill Intl F4-3300C16-8GTZSW 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMWX16GC3600C18W2D 16GB
Corsair CMWX16GC3600C18W2D 16GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Wilk Elektronik S.A. IRX3000D464L16/16G 16GB
Wilk Elektronik S.A. IRX3000D464L16/16G 16GB
内存RAM