Hexon Technology Pte Ltd HEXON 1GB vs Kingston X6TCK6-MIE 32GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Kingston X6TCK6-MIE 32GB

Kingston X6TCK6-MIE 32GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 17.2

测试中的平均数值

Kingston X6TCK6-MIE 32GB

需要考虑的原因
Kingston X6TCK6-MIE 32GB

报告一个错误

低于PassMark测试中的延时，ns

34 62

左右 -82% 更低的延时
更快的写入速度，GB/s

12.8 1,843.6

测试中的平均数值
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Kingston X6TCK6-MIE 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 34
读取速度，GB/s

3,556.6 17.2
写入速度，GB/s

1,843.6 12.8
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

542 3288

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CML8GX3M2A1600C9 4GB

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Corsair CMK32GX4M4B3200C14 8GB

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PNY Electronics PNY 2GB

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Samsung V-GeN D4S16GL32A8TS 16GB

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Crucial Technology BL8G32C16U4BL.M8FE1 8GB

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Avant Technology J641GU48J5213NG 8GB

Avant Technology J641GU48J5213NG 8GB

Kingston KTC1G-UDIMM 1GB

Kingston KTC1G-UDIMM 1GB

Crucial Technology CT16G4DFD832A.C16FN 16GB

Crucial Technology CT16G4DFD832A.C16FN 16GB

Kingston 99U5458-008.A00LF 4GB

Kingston 99U5458-008.A00LF 4GB

Corsair CMU64GX4M4A2666C16 16GB

Corsair CMU64GX4M4A2666C16 16GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Kingston KHX2400C12D4/8GX 8GB

Kingston KHX2400C12D4/8GX 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Corsair CMU16GX4M2D3000C16 8GB

Corsair CMU16GX4M2D3000C16 8GB