Hexon Technology Pte Ltd HEXON 1GB vs Samsung M378A2K43BB1-CRC 16GB

总分

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

总分

Samsung M378A2K43BB1-CRC 16GB

Samsung M378A2K43BB1-CRC 16GB

差异规格评论

差异

Hexon Technology Pte Ltd HEXON 1GB

需要考虑的原因
Hexon Technology Pte Ltd HEXON 1GB

报告一个错误

更快的读取速度，GB/s

3 16

测试中的平均数值

Samsung M378A2K43BB1-CRC 16GB

需要考虑的原因
Samsung M378A2K43BB1-CRC 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 62

左右 -100% 更低的延时
更快的写入速度，GB/s

10.8 1,843.6

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Hexon Technology Pte Ltd HEXON 1GB

Samsung M378A2K43BB1-CRC 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 31
读取速度，GB/s

3,556.6 16.0
写入速度，GB/s

1,843.6 10.8
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

542 2816

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Essencore Limited KD4AGS88C-26N1900 16GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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A-DATA Technology AD4S320038G22-B 8GB

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A-DATA Technology AO1P32NC8W1-BDZS 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

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Corsair VSA2GSDS667C4 2GB

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Kingston KF3200C16D4/8GX 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Kingston KF2666C15S4/16G 16GB

Kingston KF2666C15S4/16G 16GB