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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4DFS8266.M8FE 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Crucial Technology CT8G4DFS8266.M8FE 8GB

总分
star star star star star
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分
star star star star star
Crucial Technology CT8G4DFS8266.M8FE 8GB

Crucial Technology CT8G4DFS8266.M8FE 8GB

差异 规格 评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB 需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 29
    左右 7% 更低的延时
Crucial Technology CT8G4DFS8266.M8FE 8GB 需要考虑的原因
Crucial Technology CT8G4DFS8266.M8FE 8GB
报告一个错误
  • 更快的读取速度，GB/s
    17.2 left arrow 16.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.6 left arrow 11.8
    测试中的平均数值

规格

完整的技术规格清单
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4DFS8266.M8FE 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 29
  • 读取速度，GB/s
    16.7 left arrow 17.2
  • 写入速度，GB/s
    11.8 left arrow 13.6
  • 内存带宽，mbps
    21300 left arrow 21300
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2756 left arrow 3294

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM的比较

Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB

Crucial Technology CT8G4DFS8266.M8FE 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-3600C16-8GTZKK 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT8G4DFS8266.M8FE 8GB
Crucial Technology CT8G4DFS8266.M8FE 8GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Smart Modular SF4641G8CK8I8GKSBG 8GB
Smart Modular SF4641G8CK8I8GKSBG 8GB
内存RAM
Elpida EBJ10UE8BAFA-AE-E 1GB
Elpida EBJ10UE8BAFA-AE-E 1GB
G Skill Intl F4-2666C19-8GNT 8GB
G Skill Intl F4-2666C19-8GNT 8GB
内存RAM
Kingston 99U5428-040.A00LF 4GB
Kingston 99U5428-040.A00LF 4GB
G Skill Intl F4-2933C14-8GFX 8GB
G Skill Intl F4-2933C14-8GFX 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Corsair CMK32GX4M4K3600C16 8GB
Corsair CMK32GX4M4K3600C16 8GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Corsair CMT32GX4M2C3600C18 16GB
Corsair CMT32GX4M2C3600C18 16GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Apacer Technology 78.CAGP7.C7Z0B 8GB
Apacer Technology 78.CAGP7.C7Z0B 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N-TF 32GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Crucial Technology BL16G32C16S4B.8FB 16GB
Crucial Technology BL16G32C16S4B.8FB 16GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
UMAX Technology D4-2400-4GB-512X8-L 4GB
UMAX Technology D4-2400-4GB-512X8-L 4GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
G Skill Intl F4-3200C16-16GTZKO 16GB
G Skill Intl F4-3200C16-16GTZKO 16GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Micron Technology 8ATF1G64HZ-2G3A1 8GB
Micron Technology 8ATF1G64HZ-2G3A1 8GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Golden Empire CL16-20-20 D4-3200 16GB
Golden Empire CL16-20-20 D4-3200 16GB
内存RAM