RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 16ATF4G64HZ-2G6B4 32GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB vs Micron Technology 16ATF4G64HZ-2G6B4 32GB

总分
star star star star star
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

总分
star star star star star
Micron Technology 16ATF4G64HZ-2G6B4 32GB

Micron Technology 16ATF4G64HZ-2G6B4 32GB

差异 规格 评论

差异

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB 需要考虑的原因
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 38
    左右 29% 更低的延时
  • 更快的读取速度，GB/s
    16.7 left arrow 15.9
    测试中的平均数值
Micron Technology 16ATF4G64HZ-2G6B4 32GB 需要考虑的原因
Micron Technology 16ATF4G64HZ-2G6B4 32GB
报告一个错误
  • 更快的写入速度，GB/s
    15.1 left arrow 11.8
    测试中的平均数值

规格

完整的技术规格清单
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 16ATF4G64HZ-2G6B4 32GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 38
  • 读取速度，GB/s
    16.7 left arrow 15.9
  • 写入速度，GB/s
    11.8 left arrow 15.1
  • 内存带宽，mbps
    21300 left arrow 21300
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 15 16 17 18 19 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2756 left arrow 3264

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB RAM的比较

Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F4-3600C17-8GTZSW 8GB

Micron Technology 16ATF4G64HZ-2G6B4 32GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Mushkin 99[2/7/4]205[F/T] 8GB
Mushkin 99[2/7/4]205[F/T] 8GB
内存RAM
Kingston ACR16D3LS1NGG/4G 4GB
Kingston ACR16D3LS1NGG/4G 4GB
Kingston KCDT82-MIE 4GB
Kingston KCDT82-MIE 4GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Micron Technology 8ATF1G64AZ-2G3B1 8GB
Micron Technology 8ATF1G64AZ-2G3B1 8GB
内存RAM
G Skill Intl F3-2400C10-8GTX 8GB
G Skill Intl F3-2400C10-8GTX 8GB
Essencore Limited KD48GU881-26N190A 8GB
Essencore Limited KD48GU881-26N190A 8GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMA84GR7JJR4N-VK 32GB
SK Hynix HMA84GR7JJR4N-VK 32GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Corsair CMSX8GX4M2A2666C18 4GB
Corsair CMSX8GX4M2A2666C18 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMH16GX4M2Z3200C16 8GB
Corsair CMH16GX4M2Z3200C16 8GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
SK Hynix HMA81GS6DJR8N-XN 8GB
SK Hynix HMA81GS6DJR8N-XN 8GB
内存RAM
AMD R538G1601U2S 8GB
AMD R538G1601U2S 8GB
G Skill Intl F4-4266C19-8GTZSW 8GB
G Skill Intl F4-4266C19-8GTZSW 8GB
内存RAM
Samsung M471B5673FH0-CH9 2GB
Samsung M471B5673FH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR8N
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Golden Empire CL14-16-16 D4-2400 16GB
Golden Empire CL14-16-16 D4-2400 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Micron Technology M471A1K43CB1-CTD 8GB
Micron Technology M471A1K43CB1-CTD 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Corsair CMD64GX4M4A2400C14 16GB
Corsair CMD64GX4M4A2400C14 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT4G4DFS824A.C8FADP 4GB
Crucial Technology CT4G4DFS824A.C8FADP 4GB
内存RAM