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Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB vs OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
总分
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
报告一个错误
低于PassMark测试中的延时,ns
28
39
左右 28% 更低的延时
需要考虑的原因
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
报告一个错误
更快的读取速度,GB/s
15.1
12.4
测试中的平均数值
更快的写入速度,GB/s
12.6
9.6
测试中的平均数值
更高的内存带宽,mbps
25600
12800
左右 2 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
28
39
读取速度,GB/s
12.4
15.1
写入速度,GB/s
9.6
12.6
内存带宽,mbps
12800
25600
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2329
3000
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A-PB 8GB RAM的比较
Crucial Technology BLS8G3N18AES4.16FE 8GB
Nanya Technology NT4GC64B8HD0NS-CG 4GB
OM Nanotech Pvt.Ltd V2D4SF32GB2G82G83200 32GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905403-444.A00LF 4GB
Corsair CMK192GX4M12P3200C16 16GB
Corsair CMX4GX3M2A1600C9 2GB
Kingston 9905663-021.A00G 16GB
Samsung M391B5673EH1-CH9 2GB
Kingston ACR26D4U9S8HJ-8 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Mushkin 99[2/7/4]192[F/T] 4GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3400C16-16GTZ 16GB
PNY Electronics PNY 2GB
Crucial Technology CT8G4SFS8213.M8FB 8GB
Samsung M391B5673EH1-CH9 2GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston KHX2133C13S4/16G 16GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
G Skill Intl F4-2400C14-4GRK 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMD16GX4M4A2800C16 4GB
Kingston KHX318C10FR/8G 8GB
Asgard VMA41UG-MEC1U2AW1 8GB
SK Hynix HYMP512S64CP8-Y5 1GB
Micron Technology 8ATF1G64AZ-2G1A1 8GB
SK Hynix HYMP112U64CP8-S5 1GB
Smart Modular SMU4TDC3C0K0464SCG 4GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMK16GX4M1A2400C16 16GB
报告一个错误
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Bug description
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