RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
G Skill Intl F4-2666C18-4GFX 4GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB vs G Skill Intl F4-2666C18-4GFX 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
总分
G Skill Intl F4-2666C18-4GFX 4GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
报告一个错误
低于PassMark测试中的延时,ns
29
74
左右 61% 更低的延时
需要考虑的原因
G Skill Intl F4-2666C18-4GFX 4GB
报告一个错误
更快的读取速度,GB/s
15.4
12.1
测试中的平均数值
更快的写入速度,GB/s
8.6
7.8
测试中的平均数值
更高的内存带宽,mbps
21300
12800
左右 1.66 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
G Skill Intl F4-2666C18-4GFX 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
29
74
读取速度,GB/s
12.1
15.4
写入速度,GB/s
7.8
8.6
内存带宽,mbps
12800
21300
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 9 11 13 15 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2177
1849
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB RAM的比较
G Skill Intl F3-12800CL9-4GBRL 4GB
Avant Technology W644GU44J2320NH 32GB
G Skill Intl F4-2666C18-4GFX 4GB RAM的比较
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 78T2953EZ3-CF7 1GB
Team Group Inc. TEANGROUP-UD4-2400 8GB
Samsung M391B5673EH1-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6JJR8N
Samsung M391B5673FH0-CH9 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Samsung M471B1G73QH0-YK0 8GB
Lenovo LMKUFG68AHFHD-32A 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Gloway International (HK) STK4U2400D17082C 8GB
Swissbit MEU25664D6BC2EP-30 2GB
G Skill Intl F4-4000C18-8GTRG 8GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Crucial Technology CT8G4SFRA32A.C16FG 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Asgard VMA41UG-MEC1U2AW1 8GB
Kingston 9965516-430.A00G 16GB
G Skill Intl F4-4000C19-8GTZSW 8GB
AMD AE34G1601U1 4GB
Kingston 9905663-005.A00G 16GB
Samsung M3 78T2863EHS-CF7 1GB
Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB
Team Group Inc. Team-Elite-1333 4GB
Avant Technology J641GU42J5213N0 8GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
G Skill Intl F4-3466C18-8GSXW 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Kingston MSISID4S9S8ME-8 8GB
报告一个错误
×
Bug description
Source link