Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

Patriot Memory (PDP Systems) 4000 C19 Series 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB vs Patriot Memory (PDP Systems) 4000 C19 Series 8GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

总分

Patriot Memory (PDP Systems) 4000 C19 Series 8GB

Patriot Memory (PDP Systems) 4000 C19 Series 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

报告一个错误

Patriot Memory (PDP Systems) 4000 C19 Series 8GB

需要考虑的原因
Patriot Memory (PDP Systems) 4000 C19 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 29

左右 -12% 更低的延时
更快的读取速度，GB/s

19.7 12.1

测试中的平均数值
更快的写入速度，GB/s

17.0 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

Patriot Memory (PDP Systems) 4000 C19 Series 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

29 26
读取速度，GB/s

12.1 19.7
写入速度，GB/s

7.8 17.0
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2177 3842

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Patriot Memory (PDP Systems) PSD34G16002 4GB

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SK Hynix HMA81GU7AFR8N-UH 8GB

Samsung M393B5170FH0-CK0 4GB

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Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

SK Hynix HMA81GU6MFR8N-UH 8GB

SK Hynix HMA81GU6MFR8N-UH 8GB