RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
总分
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
报告一个错误
低于PassMark测试中的延时,ns
29
66
左右 56% 更低的延时
更快的写入速度,GB/s
9.0
7.3
测试中的平均数值
需要考虑的原因
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
报告一个错误
更快的读取速度,GB/s
14.7
13.4
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
29
66
读取速度,GB/s
13.4
14.7
写入速度,GB/s
9.0
7.3
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2423
1699
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M378B5773DH0-CH9 2GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
Samsung M4 70T5663CZ3-CE6 2GB
Corsair CMD128GX4M8B3000C16 16GB
Samsung M393B1K70QB0-CK0 8GB
Crucial Technology CT8G4SFRA266.C8FE 8GB
Samsung M393B1K70QB0-CK0 8GB
Essencore Limited KD48GU880-26N160T 8GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
AMD R7416G2400U2S 16GB
Kingston KVR533D2N4 512MB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Nanya Technology M2X4G64CB8HG9N-DG 4GB
G Skill Intl F4-2133C15-8GVK 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB
Samsung M471B1G73DB0-YK0 8GB
Apacer Technology 78.CAGN4.4020B 8GB
Kingston KVR16N11/8-SP 8GB
Samsung M391A2K43BB1-CPB 16GB
Kingston 9905403-444.A00LF 4GB
Crucial Technology BLM8G40C18U4B.M8FE1 8GB
Samsung M471B5673FH0-CF8 2GB
Kingston 9905598-026.A00G 16GB
Kingston 9905469-143.A00LF 4GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Patriot Memory (PDP Systems) PSD44G240081 4GB
报告一个错误
×
Bug description
Source link