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Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Crucial Technology CT4G4DFS8213.M8FA 4GB
比较
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB vs Crucial Technology CT4G4DFS8213.M8FA 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
总分
Crucial Technology CT4G4DFS8213.M8FA 4GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
报告一个错误
需要考虑的原因
Crucial Technology CT4G4DFS8213.M8FA 4GB
报告一个错误
低于PassMark测试中的延时,ns
33
62
左右 -88% 更低的延时
更快的读取速度,GB/s
14.8
7.4
测试中的平均数值
更快的写入速度,GB/s
10.6
5.9
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Crucial Technology CT4G4DFS8213.M8FA 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
62
33
读取速度,GB/s
7.4
14.8
写入速度,GB/s
5.9
10.6
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1612
1967
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB RAM的比较
Samsung M392B2G70DM0-YH9 16GB
Samsung M393B1K70DH0-CH9 8GB
Crucial Technology CT4G4DFS8213.M8FA 4GB RAM的比较
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Crucial Technology CT8G4DFD8213.C16FBR2 8GB
SK Hynix HYMP164U64CP6-Y5 512MB
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Kingston 99U5474-013.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU7MFR8N
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3600C16-8GTZNC 8GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Kingston 9905624-051.A00G 8GB
Ramaxel Technology RMT3010EC58E8F1333 2GB
Avant Technology J644GU44J2320NF 32GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
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