Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Crucial Technology BLT4G4D30AETA.K8FE 4GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB vs Crucial Technology BLT4G4D30AETA.K8FE 4GB

总分
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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

总分
star star star star star
Crucial Technology BLT4G4D30AETA.K8FE 4GB

Crucial Technology BLT4G4D30AETA.K8FE 4GB

差异

  • 更快的读取速度,GB/s
    3 left arrow 18.5
    测试中的平均数值
  • 低于PassMark测试中的延时,ns
    20 left arrow 65
    左右 -225% 更低的延时
  • 更快的写入速度,GB/s
    14.3 left arrow 1,592.0
    测试中的平均数值
  • 更高的内存带宽,mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Crucial Technology BLT4G4D30AETA.K8FE 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时,ns
    65 left arrow 20
  • 读取速度,GB/s
    3,580.8 left arrow 18.5
  • 写入速度,GB/s
    1,592.0 left arrow 14.3
  • 内存带宽,mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    572 left arrow 2965
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最新比较