Kingmax Semiconductor FLFE85F-C8KL9 2GB vs G Skill Intl F4-2133C15-4GFX 4GB

总分

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

总分

G Skill Intl F4-2133C15-4GFX 4GB

G Skill Intl F4-2133C15-4GFX 4GB

差异规格评论

差异

Kingmax Semiconductor FLFE85F-C8KL9 2GB

需要考虑的原因
Kingmax Semiconductor FLFE85F-C8KL9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 80

左右 66% 更低的延时

G Skill Intl F4-2133C15-4GFX 4GB

需要考虑的原因
G Skill Intl F4-2133C15-4GFX 4GB

报告一个错误

更快的读取速度，GB/s

14.1 10.1

测试中的平均数值
更快的写入速度，GB/s

7.4 6.2

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingmax Semiconductor FLFE85F-C8KL9 2GB

G Skill Intl F4-2133C15-4GFX 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 80
读取速度，GB/s

10.1 14.1
写入速度，GB/s

6.2 7.4
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1411 1564

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Shenzen Recadata Storage Technology 8GB

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G Skill Intl F4-2666C15-4GVR 4GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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A-DATA Technology AM2P32NC8W1-BCFS 8GB

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Kingston 99U5474-038.A00LF 4GB

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Samsung M3 78T2863EHS-CF7 1GB

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Team Group Inc. DDR4 3600 8GB

Team Group Inc. DDR4 3600 8GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

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A-DATA Technology AX4S2800316G18-B 16GB

A-DATA Technology AX4S2800316G18-B 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

G Skill Intl F4-3000C14-8GVK 8GB

G Skill Intl F4-3000C14-8GVK 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Micron Technology CT8G4DFD8213.16FA11 8GB

Micron Technology CT8G4DFD8213.16FA11 8GB