Kingston 2GB-DDR2 800Mhz 2GB vs Corsair CMK64GX4M4E3200C16 16GB

总分

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

总分

Corsair CMK64GX4M4E3200C16 16GB

Corsair CMK64GX4M4E3200C16 16GB

差异规格评论

差异

Kingston 2GB-DDR2 800Mhz 2GB

需要考虑的原因
Kingston 2GB-DDR2 800Mhz 2GB

报告一个错误

更快的读取速度，GB/s

5 14.5

测试中的平均数值
更快的写入速度，GB/s

2,160.7 13.0

测试中的平均数值

Corsair CMK64GX4M4E3200C16 16GB

需要考虑的原因
Corsair CMK64GX4M4E3200C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 43

左右 -19% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Kingston 2GB-DDR2 800Mhz 2GB

Corsair CMK64GX4M4E3200C16 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

43 36
读取速度，GB/s

5,987.5 14.5
写入速度，GB/s

2,160.7 13.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

957 3192

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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AMD AE34G2139U2 4GB

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Corsair CM4X8GF2400C16N2 8GB

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Samsung M393B1K70QB0-CK0 8GB

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UMAX Technology D4-2400-4GB-512X8-L 4GB

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Hexon Technology Pte Ltd HEXON 1GB

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A-DATA Technology DOVF1B163G2G 2GB

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Corsair CMW32GX4M2D3600C18 16GB

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AMD AE34G1601U1 4GB

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Crucial Technology CT16G4DFD824A.M16FE 16GB

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Samsung 1600 CL10 Series 8GB

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Kingston 9905403-156.A00LF 2GB

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Apacer Technology 78.01GA0.9K5 1GB

Apacer Technology 78.01GA0.9K5 1GB

V-GEN D4H4GS24A8 4GB

V-GEN D4H4GS24A8 4GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

G Skill Intl F4-2800C18-16GRS 16GB

G Skill Intl F4-2800C18-16GRS 16GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

G Skill Intl F4-2800C16-8GVR 8GB

G Skill Intl F4-2800C16-8GVR 8GB

Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

G Skill Intl F4-3200C14-32GTRG 32GB

G Skill Intl F4-3200C14-32GTRG 32GB