Kingston 9905403-011.A03LF 2GB vs Crucial Technology CT8G4DFS824A.M8FH3 8GB

总分

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

总分

Crucial Technology CT8G4DFS824A.M8FH3 8GB

Crucial Technology CT8G4DFS824A.M8FH3 8GB

差异规格评论

差异

Kingston 9905403-011.A03LF 2GB

需要考虑的原因
Kingston 9905403-011.A03LF 2GB

报告一个错误

Crucial Technology CT8G4DFS824A.M8FH3 8GB

需要考虑的原因
Crucial Technology CT8G4DFS824A.M8FH3 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 27

左右 -35% 更低的延时
更快的读取速度，GB/s

17 13

测试中的平均数值
更快的写入速度，GB/s

8.2 8.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-011.A03LF 2GB

Crucial Technology CT8G4DFS824A.M8FH3 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 20
读取速度，GB/s

13.0 17.0
写入速度，GB/s

8.0 8.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1976 2503

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Essencore Limited KD4AGSA8A-32N2200 16GB

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Kingston 9905403-011.A03LF 2GB

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Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16GB

Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16

Corsair CMSX4GX3M1A1600C9 4GB

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Gold Key Technology Co Ltd NMUD480E82-3200D 8GB

Gold Key Technology Co Ltd NMUD480E82-3200D 8GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB

SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology BLE8G4D26AFEA.16FBD 8GB

Crucial Technology BLE8G4D26AFEA.16FBD 8GB