Kingston 9905403-011.A03LF 2GB vs Kingston 9905713-004.A00G 4GB

总分

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

总分

Kingston 9905713-004.A00G 4GB

Kingston 9905713-004.A00G 4GB

差异规格评论

差异

Kingston 9905403-011.A03LF 2GB

需要考虑的原因
Kingston 9905403-011.A03LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 66

左右 59% 更低的延时
更快的写入速度，GB/s

8.0 6.1

测试中的平均数值

Kingston 9905713-004.A00G 4GB

需要考虑的原因
Kingston 9905713-004.A00G 4GB

报告一个错误

更快的读取速度，GB/s

14.5 13

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-011.A03LF 2GB

Kingston 9905713-004.A00G 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 66
读取速度，GB/s

13.0 14.5
写入速度，GB/s

8.0 6.1
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1976 1473

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 16ATF4G64AZ-2G6B1 32GB

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Corsair CMD64GX4M8B2800C14 8GB

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Micron Technology 4ATF51264AZ-2G3B1 4GB

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Micron Technology 16ATF4G64AZ-3G2B1 32GB

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G Skill Intl F3-1866C8-8GTX 8GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Corsair CMU16GX4M2D3000C16 8GB

Corsair CMU16GX4M2D3000C16 8GB

Smart Modular SF564128CJ8N6NNSEG 4GB

Smart Modular SF564128CJ8N6NNSEG 4GB

Samsung M474A1G43EB1-CRC 8GB

Samsung M474A1G43EB1-CRC 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Crucial Technology BL16G30C15U4R.M16FE1 16GB

Crucial Technology BL16G30C15U4R.M16FE1 16GB

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SK Hynix HMT451S6BFR8A-PB 4GB

SK Hynix HMT451S6BFR8A-PB 4GB

SanMax Technologies Inc. SMD4-U8G28MA-21P 8GB

SanMax Technologies Inc. SMD4-U8G28MA-21P 8GB