Kingston 9905403-090.A01LF 4GB vs Corsair CMT32GX4M2C3600C18 16GB

总分

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

总分

Corsair CMT32GX4M2C3600C18 16GB

Corsair CMT32GX4M2C3600C18 16GB

差异规格评论

差异

Kingston 9905403-090.A01LF 4GB

需要考虑的原因
Kingston 9905403-090.A01LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 28

左右 4% 更低的延时

Corsair CMT32GX4M2C3600C18 16GB

需要考虑的原因
Corsair CMT32GX4M2C3600C18 16GB

报告一个错误

更快的读取速度，GB/s

17.8 13.9

测试中的平均数值
更快的写入速度，GB/s

16.9 8.9

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-090.A01LF 4GB

Corsair CMT32GX4M2C3600C18 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 28
读取速度，GB/s

13.9 17.8
写入速度，GB/s

8.9 16.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2418 3898

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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Samsung M4 70T2953EZ3-CE6 1GB

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Mushkin 991586 2GB

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Crucial Technology BLS8G4D26BFSE.16FE 8GB

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Kingston 99U5584-010.A00LF 4GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMV8GX4M1A2133C15 8GB

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A-DATA Technology VDQVE1B16 2GB

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Corsair CMW32GX4M2E3200C16 16GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

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Qimonda 64T128020EDL2.5C2 1GB

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A-DATA Technology AO2P32NCST2-BZ7SHD 16GB

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Crucial Technology BLE4G3D1608DE1TX0. 4GB

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G Skill Intl F4-4000C18-32GTRS 32GB

G Skill Intl F4-4000C18-32GTRS 32GB

G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

Kingston 9905598-019.A00G 16GB

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Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

Crucial Technology BL16G36C16U4RL.M8FB1 16GB

Crucial Technology BL16G36C16U4RL.M8FB1 16GB

Samsung M471A1G44AB0-CWE 8GB

Samsung M471A1G44AB0-CWE 8GB