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Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-3400C16-8GVK 8GB
比较
Kingston 9905403-090.A01LF 4GB vs G Skill Intl F4-3400C16-8GVK 8GB
总分
Kingston 9905403-090.A01LF 4GB
总分
G Skill Intl F4-3400C16-8GVK 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston 9905403-090.A01LF 4GB
报告一个错误
低于PassMark测试中的延时,ns
27
29
左右 7% 更低的延时
需要考虑的原因
G Skill Intl F4-3400C16-8GVK 8GB
报告一个错误
更快的读取速度,GB/s
18.6
13.9
测试中的平均数值
更快的写入速度,GB/s
14.8
8.9
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-3400C16-8GVK 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
29
读取速度,GB/s
13.9
18.6
写入速度,GB/s
8.9
14.8
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2418
3480
Kingston 9905403-090.A01LF 4GB RAM的比较
Samsung M386B4G70DM0-YK03 32GB
Kingston K531R8-ETF 4GB
G Skill Intl F4-3400C16-8GVK 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F2-8500CL5-2GBPI 2GB
Gold Key Technology Co Ltd NMUD480E86-3200 8GB
Kingston 9965525-018.A00LF 4GB
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-3400C16-8GVK 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Samsung M378A5244CB0-CWE 4GB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMK128GX4M8B3333C16 16GB
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18ASF2G72AZ-2G1B1 16GB
Kingston 9905403-444.A00LF 4GB
G Skill Intl F4-2666C18-8GTZR 8GB
G Skill Intl F3-2133C9-4GAB 4GB
Kingston 9905663-006.A00G 16GB
A-DATA Technology DOVF1B163G2G 2GB
Patriot Memory (PDP Systems) PSD48G213381S 8GB
Samsung M378T5663QZ3-CF7 2GB
Patriot Memory (PDP Systems) 4133 C19 Series 8GB
Samsung M393B2G70BH0-CH9 16GB
Panram International Corporation W4N2400PS-8G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
DSL Memory D4SS12082SH21A-A 8GB
Samsung M378B5773DH0-CH9 2GB
Super Talent F24UB16GV 16GB
SK Hynix HYMP164U64CP6-Y5 512MB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N
报告一个错误
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Bug description
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