Kingston 9905403-444.A00LF 4GB vs Crucial Technology CT8G4SFS8266.M8FD 8GB

总分

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

总分

Crucial Technology CT8G4SFS8266.M8FD 8GB

Crucial Technology CT8G4SFS8266.M8FD 8GB

差异规格评论

差异

Kingston 9905403-444.A00LF 4GB

需要考虑的原因
Kingston 9905403-444.A00LF 4GB

报告一个错误

Crucial Technology CT8G4SFS8266.M8FD 8GB

需要考虑的原因
Crucial Technology CT8G4SFS8266.M8FD 8GB

报告一个错误

更快的读取速度，GB/s

15.2 11.5

测试中的平均数值
更快的写入速度，GB/s

10.9 6.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-444.A00LF 4GB

Crucial Technology CT8G4SFS8266.M8FD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 35
读取速度，GB/s

11.5 15.2
写入速度，GB/s

6.5 10.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1994 2571

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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G Skill Intl F4-2933C14-16GTZRX 16GB

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Crucial Technology CT51264BA1339.C16F 4GB

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Samsung M4 70T5663QZ3-CF7 2GB

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Apacer Technology GD2.2229BH.001 16GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Micron Technology 16ATF2G64HZ-2G3E1 16GB

Micron Technology 16ATF2G64HZ-2G3E1 16GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

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Asgard VMA45UG-MEC1U2BQ2 8GB

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Samsung M3 78T5263AZ3-CF7 4GB

Samsung M3 78T5263AZ3-CF7 4GB

Samsung M3 78T2863RZS-CF7 1GB

Samsung M3 78T2863RZS-CF7 1GB