Kingston 9905471-006.A00LF 4GB vs Corsair CMK16GX4M2B3200C14 8GB

总分

Kingston 9905471-006.A00LF 4GB

Kingston 9905471-006.A00LF 4GB

总分

Corsair CMK16GX4M2B3200C14 8GB

Corsair CMK16GX4M2B3200C14 8GB

差异规格评论

差异

Kingston 9905471-006.A00LF 4GB

需要考虑的原因
Kingston 9905471-006.A00LF 4GB

报告一个错误

Corsair CMK16GX4M2B3200C14 8GB

需要考虑的原因
Corsair CMK16GX4M2B3200C14 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 38

左右 -73% 更低的延时
更快的读取速度，GB/s

18.2 12.9

测试中的平均数值
更快的写入速度，GB/s

13.9 8.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905471-006.A00LF 4GB

Corsair CMK16GX4M2B3200C14 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 22
读取速度，GB/s

12.9 18.2
写入速度，GB/s

8.3 13.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2144 3138

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-4000C19-16GTZSW 16GB

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Nanya Technology M2X4G64CB8HG9N-DG 4GB

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Kingston ACR256X64D3S1333C9 2GB

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Gold Key Technology Co Ltd NMSO416F82-3200E 16GB

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Corsair CMD16GX4M2K4133C19 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

SK Hynix GKE800UD102408-2133 8GB

SK Hynix GKE800UD102408-2133 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Apacer Technology GD2.0927WH.001 8GB

Apacer Technology GD2.0927WH.001 8GB

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

OM Nanotech Pvt.Ltd V1D4L816GB2G82G83200 16GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

SK Hynix HMA851S6DJR6N-VK 4GB

SK Hynix HMA851S6DJR6N-VK 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

V-GEN D4H4GL30A8TS5 4GB

V-GEN D4H4GL30A8TS5 4GB