Kingston 9905471-006.A00LF 4GB vs G Skill Intl F4-3466C16-8GTZR 8GB

总分

Kingston 9905471-006.A00LF 4GB

Kingston 9905471-006.A00LF 4GB

总分

G Skill Intl F4-3466C16-8GTZR 8GB

G Skill Intl F4-3466C16-8GTZR 8GB

差异规格评论

差异

Kingston 9905471-006.A00LF 4GB

需要考虑的原因
Kingston 9905471-006.A00LF 4GB

报告一个错误

G Skill Intl F4-3466C16-8GTZR 8GB

需要考虑的原因
G Skill Intl F4-3466C16-8GTZR 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 38

左右 -27% 更低的延时
更快的读取速度，GB/s

17.6 12.9

测试中的平均数值
更快的写入速度，GB/s

15.5 8.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905471-006.A00LF 4GB

G Skill Intl F4-3466C16-8GTZR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 30
读取速度，GB/s

12.9 17.6
写入速度，GB/s

8.3 15.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2144 3564

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378A1G44BB0-CWE 8GB

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Corsair CMU32GX4M2A2666C16 16GB

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Samsung M471B5673FH0-CF8 2GB

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G Skill Intl F4-3000C16-16GSXWB 16GB

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Samsung M393B1K70CH0-YH9 8GB

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Crucial Technology CT16G4DFD824A.C16FDR 16GB

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Ramaxel Technology RMT3160ED58E9W1600 4GB

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G Skill Intl F4-4000C16-8GVK 8GB

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G Skill Intl F3-2133C9-4GAB 4GB

Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB

Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB

Samsung M378B5673EH1-CF8 2GB

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Kingston 9905713-030.A00G 8GB

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Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB

Thermaltake Technology Co Ltd CL-W262-CA00SW-A 8GB