Kingston 9905471-006.A00LF 4GB vs SK Hynix HMA82GR7MFR8N-UH 16GB

总分

Kingston 9905471-006.A00LF 4GB

Kingston 9905471-006.A00LF 4GB

总分

SK Hynix HMA82GR7MFR8N-UH 16GB

SK Hynix HMA82GR7MFR8N-UH 16GB

差异规格评论

差异

Kingston 9905471-006.A00LF 4GB

需要考虑的原因
Kingston 9905471-006.A00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 57

左右 33% 更低的延时
更快的读取速度，GB/s

12.9 9.3

测试中的平均数值
更快的写入速度，GB/s

8.3 7.8

测试中的平均数值

SK Hynix HMA82GR7MFR8N-UH 16GB

需要考虑的原因
SK Hynix HMA82GR7MFR8N-UH 16GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston 9905471-006.A00LF 4GB

SK Hynix HMA82GR7MFR8N-UH 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 57
读取速度，GB/s

12.9 9.3
写入速度，GB/s

8.3 7.8
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2144 2233

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1K70QB0-CK0 8GB

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Samsung M471A5244BB0-CRC 4GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

Nanya Technology NT8GA64D88AX3S-HR 8GB

Nanya Technology NT8GA64D88AX3S-HR 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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SK Hynix HMA851S6CJR6N-VK 4GB

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SK Hynix HMT351S6CFR8C-PB 4GB

Kingston HP26D4U9S8MD-8 8GB

Kingston HP26D4U9S8MD-8 8GB