Kingston 9965525-010.A00LF 4GB vs SK Hynix HMA451U7MFR8N-TF 4GB

总分

Kingston 9965525-010.A00LF 4GB

Kingston 9965525-010.A00LF 4GB

总分

SK Hynix HMA451U7MFR8N-TF 4GB

SK Hynix HMA451U7MFR8N-TF 4GB

差异规格评论

差异

Kingston 9965525-010.A00LF 4GB

需要考虑的原因
Kingston 9965525-010.A00LF 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 32

左右 16% 更低的延时
更快的读取速度，GB/s

14.2 11.1

测试中的平均数值

SK Hynix HMA451U7MFR8N-TF 4GB

需要考虑的原因
SK Hynix HMA451U7MFR8N-TF 4GB

报告一个错误

更快的写入速度，GB/s

9.2 8.7

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9965525-010.A00LF 4GB

SK Hynix HMA451U7MFR8N-TF 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 32
读取速度，GB/s

14.2 11.1
写入速度，GB/s

8.7 9.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2230 2449

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M471A5244CB0-CWE 4GB

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Kingston KHX2666C16D4/4G 4GB

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Crucial Technology CT51264BD1339.M16F 4GB

Micron Technology 18ASF1G72PDZ-2G1A1 8GB

Micron Technology 18ASF1G72PDZ-2G1A1 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Kingston KTP9W1-MID 16GB

Kingston KTP9W1-MID 16GB

SK Hynix HMT425S6CFR6A-PB 2GB

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