Kingston 9965525-018.A00LF 4GB vs Corsair CMD32GX4M4B3866C18 8GB

总分

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

总分

Corsair CMD32GX4M4B3866C18 8GB

Corsair CMD32GX4M4B3866C18 8GB

差异规格评论

差异

Kingston 9965525-018.A00LF 4GB

需要考虑的原因
Kingston 9965525-018.A00LF 4GB

报告一个错误

Corsair CMD32GX4M4B3866C18 8GB

需要考虑的原因
Corsair CMD32GX4M4B3866C18 8GB

报告一个错误

低于PassMark测试中的延时，ns

18 27

左右 -50% 更低的延时
更快的读取速度，GB/s

21.1 13.2

测试中的平均数值
更快的写入速度，GB/s

16.9 8.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9965525-018.A00LF 4GB

Corsair CMD32GX4M4B3866C18 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 18
读取速度，GB/s

13.2 21.1
写入速度，GB/s

8.6 16.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2196 3971

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMW16GX4M2K4000C19 8GB

Corsair CMW16GX4M2K4000C19 8GB

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

G Skill Intl F4-3200C14-16GTRG 16GB

G Skill Intl F4-3200C14-16GTRG 16GB

Kingston KHX1600C9S3L/4G 4GB

Kingston KHX1600C9S3L/4G 4GB

Corsair CMV16GX4M1L2400C16 16GB

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Kingston 99U5471-012.A00LF 4GB

Kingston 99U5471-012.A00LF 4GB

Crucial Technology CT16G4DFD8266.C16FD1 16GB

Crucial Technology CT16G4DFD8266.C16FD1 16GB

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

G Skill Intl F4-4000C15-8GVK 8GB

G Skill Intl F4-4000C15-8GVK 8GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

AMD R9S48G3206U2S 8GB

AMD R9S48G3206U2S 8GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-4800C19-8GTESC 8GB

G Skill Intl F4-4800C19-8GTESC 8GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Crucial Technology CT8G4SFD8213.C16FBD1 8GB

Crucial Technology CT8G4SFD8213.C16FBD1 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

Asgard VML41UG-MIC1U22T1 8GB

Asgard VML41UG-MIC1U22T1 8GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

G Skill Intl F4-3600C17-16GTZKK 16GB

G Skill Intl F4-3600C17-16GTZKK 16GB

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

G Skill Intl F4-3600C16-16GTZN 16GB

G Skill Intl F4-3600C16-16GTZN 16GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Transcend Information TS1GSH64V1H 8GB

Transcend Information TS1GSH64V1H 8GB