Kingston 9965662-016.A00G 16GB vs Kingston X6TCK6-MIE 32GB

总分

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

总分

Kingston X6TCK6-MIE 32GB

Kingston X6TCK6-MIE 32GB

差异规格评论

差异

Kingston 9965662-016.A00G 16GB

需要考虑的原因
Kingston 9965662-016.A00G 16GB

报告一个错误

Kingston X6TCK6-MIE 32GB

需要考虑的原因
Kingston X6TCK6-MIE 32GB

报告一个错误

低于PassMark测试中的延时，ns

34 39

左右 -15% 更低的延时
更快的读取速度，GB/s

17.2 7.9

测试中的平均数值
更快的写入速度，GB/s

12.8 7.8

测试中的平均数值
更高的内存带宽，mbps

21300 17000

左右 1.25 更高的带宽

规格

完整的技术规格清单

Kingston 9965662-016.A00G 16GB

Kingston X6TCK6-MIE 32GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

39 34
读取速度，GB/s

7.9 17.2
写入速度，GB/s

7.8 12.8
内存带宽，mbps

17000 21300

Other

描述

PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1939 3288

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMT64GX4M8X3000C15 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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SK Hynix HMA82GS6CJR8N-VK 16GB

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Team Group Inc. Team-Elite-2400 4GB

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Elpida EBJ41UF8BDU5-GN-F 4GB

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Wilk Elektronik S.A. IR2400D464L17S/4G 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

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Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

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Corsair CMK32GX4M4B3200C16 8GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Kingston KH2400C15D4/8 8GB

Kingston KH2400C15D4/8 8GB

Kingston 99U5429-007.A00LF 2GB

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Kingston 9905630-048.A00G 16GB

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Samsung M393B2G70BH0-CH9 16GB

Heoriady HX2666DT8G-TD 8GB

Heoriady HX2666DT8G-TD 8GB