Kingston 99U5474-013.A00LF 2GB vs Kingston XW21KG-HYD-NX 8GB

总分

Kingston 99U5474-013.A00LF 2GB

Kingston 99U5474-013.A00LF 2GB

总分

Kingston XW21KG-HYD-NX 8GB

Kingston XW21KG-HYD-NX 8GB

差异规格评论

差异

Kingston 99U5474-013.A00LF 2GB

需要考虑的原因
Kingston 99U5474-013.A00LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 37

左右 27% 更低的延时

Kingston XW21KG-HYD-NX 8GB

需要考虑的原因
Kingston XW21KG-HYD-NX 8GB

报告一个错误

更快的读取速度，GB/s

18.5 10

测试中的平均数值
更快的写入速度，GB/s

12.6 5.7

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston 99U5474-013.A00LF 2GB

Kingston XW21KG-HYD-NX 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 37
读取速度，GB/s

10.0 18.5
写入速度，GB/s

5.7 12.6
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1435 3100

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Samsung M393B1G70BH0-YK0 8GB

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Samsung M378A1K43EB2-CWE 8GB

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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

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Crucial Technology BLS16G4D30AESE.M16FE 16GB

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Samsung M393B1K70CHD-CH9 8GB

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Samsung M391A2K43BB1-CRC 16GB

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A-DATA Technology DQKD1A08 1GB

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Corsair CMK8GX4M2B3200C16 4GB

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Gold Key Technology Co Ltd NMUD480E85-3200E 8GB

Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

Crucial Technology BLS16G4D26BFST.16FD 16GB

Crucial Technology BLS16G4D26BFST.16FD 16GB

Corsair CM2X1024-6400C4 1GB

Corsair CM2X1024-6400C4 1GB

Golden Empire CL15-15-15 D4-2133 8GB

Golden Empire CL15-15-15 D4-2133 8GB

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Kingston 9905625-098.A00G 16GB

Kingston 9905625-098.A00G 16GB

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

Kingston CAC24D4S7D8MB-16 16GB

Kingston CAC24D4S7D8MB-16 16GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

Crucial Technology CT8G4DFD8213.C16FBD1 8GB

Crucial Technology CT8G4DFD8213.C16FBD1 8GB