Kingston 99U5474-028.A00LF 4GB vs Avant Technology J641GU49J2320NE 8GB

总分

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

总分

Avant Technology J641GU49J2320NE 8GB

Avant Technology J641GU49J2320NE 8GB

差异规格评论

差异

Kingston 99U5474-028.A00LF 4GB

需要考虑的原因
Kingston 99U5474-028.A00LF 4GB

报告一个错误

Avant Technology J641GU49J2320NE 8GB

需要考虑的原因
Avant Technology J641GU49J2320NE 8GB

报告一个错误

低于PassMark测试中的延时，ns

29 39

左右 -34% 更低的延时
更快的读取速度，GB/s

16.7 12.6

测试中的平均数值
更快的写入速度，GB/s

12.8 6.8

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Kingston 99U5474-028.A00LF 4GB

Avant Technology J641GU49J2320NE 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 29
读取速度，GB/s

12.6 16.7
写入速度，GB/s

6.8 12.8
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1954 3239

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology AO2P24HCST2-BW8S 16GB

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Corsair CMY16GX3M4A2133C8 4GB

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Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

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Kingston HP698651-154-MCN 8GB

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Kingmax Semiconductor GLAF62F-D8---------- 4GB

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Chun Well Technology Holding Limited D4U0836181B 8GB

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Samsung M391B5673EH1-CH9 2GB

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Samsung M386A4G40DM0-CPB 32GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Crucial Technology CT32G4SFD832A.C16FB 32GB

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Samsung M4 70T2864QZ3-CF7 1GB

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Kingston 9905471-002.A00LF 2GB

G Skill Intl F4-2133C15-4GVK 4GB

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Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Micron Technology 16ATF2G64AZ-3G2E1 16GB

Micron Technology 16ATF2G64AZ-3G2E1 16GB

Kingston 99U5474-028.A00LF 4GB

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Kingston 99U5403-036.A00G 4GB

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Crucial Technology BL16G30C15U4W.M16FE1 16GB