Kingston ACR256X64D3S1333C9 2GB vs Crucial Technology CT4G4DFS824A.C8FBD1 4GB

总分

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

总分

Crucial Technology CT4G4DFS824A.C8FBD1 4GB

Crucial Technology CT4G4DFS824A.C8FBD1 4GB

差异规格评论

差异

Kingston ACR256X64D3S1333C9 2GB

需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 29

左右 7% 更低的延时

Crucial Technology CT4G4DFS824A.C8FBD1 4GB

需要考虑的原因
Crucial Technology CT4G4DFS824A.C8FBD1 4GB

报告一个错误

更快的读取速度，GB/s

16.6 11.9

测试中的平均数值
更快的写入速度，GB/s

13.4 8.5

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology CT4G4DFS824A.C8FBD1 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 29
读取速度，GB/s

11.9 16.6
写入速度，GB/s

8.5 13.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1620 3023

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Crucial Technology CT8G4SFD824A.M16FE1 8GB

Crucial Technology CT8G4SFD824A.M16FE1 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Kingston 9905702-400.A00G 8GB

Kingston 9905702-400.A00G 8GB

Kingston 99U5471-033.A00LF 4GB

Kingston 99U5471-033.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Gold Key Technology Co Ltd NMUD416E82-3000D 16GB

Gold Key Technology Co Ltd NMUD416E82-3000D 16GB

Kingmax Semiconductor GLAG42F-18---------- 8GB

Kingmax Semiconductor GLAG42F-18---------- 8GB

Crucial Technology CT8G4DFRA32A.M8FR 8GB

Crucial Technology CT8G4DFRA32A.M8FR 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Corsair CMD32GX4M4A2400C12 8GB

Corsair CMD32GX4M4A2400C12 8GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Micron Technology 16ATF2G64AZ-2G3E1 16GB

Micron Technology 16ATF2G64AZ-2G3E1 16GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Samsung M471A5244CB0-CTD 4GB

Samsung M471A5244CB0-CTD 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Apacer Technology GD2.1831WS.002 16GB

Apacer Technology GD2.1831WS.002 16GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Avant Technology W642GU42J7240N8 16GB

Avant Technology W642GU42J7240N8 16GB

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

G Skill Intl F4-3866C18-8GTZKW 8GB

G Skill Intl F4-3866C18-8GTZKW 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Apacer Technology D12.2324CS.001 8GB

Apacer Technology D12.2324CS.001 8GB

Kingston 9905469-124.A00LF 4GB

Kingston 9905469-124.A00LF 4GB

Corsair CMK16GX4M2B3600C18 8GB

Corsair CMK16GX4M2B3600C18 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Micron Technology 18ASF1G72PDZ-2G3A2 8GB

Micron Technology 18ASF1G72PDZ-2G3A2 8GB