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Kingston ACR256X64D3S1333C9 2GB
Gold Key Technology Co Ltd NMUD480E82-3200D 8GB
比较
Kingston ACR256X64D3S1333C9 2GB vs Gold Key Technology Co Ltd NMUD480E82-3200D 8GB
总分
Kingston ACR256X64D3S1333C9 2GB
总分
Gold Key Technology Co Ltd NMUD480E82-3200D 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston ACR256X64D3S1333C9 2GB
报告一个错误
低于PassMark测试中的延时,ns
27
35
左右 23% 更低的延时
需要考虑的原因
Gold Key Technology Co Ltd NMUD480E82-3200D 8GB
报告一个错误
更快的读取速度,GB/s
19
11.9
测试中的平均数值
更快的写入速度,GB/s
13.8
8.5
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Kingston ACR256X64D3S1333C9 2GB
Gold Key Technology Co Ltd NMUD480E82-3200D 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
35
读取速度,GB/s
11.9
19.0
写入速度,GB/s
8.5
13.8
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1620
3331
Kingston ACR256X64D3S1333C9 2GB RAM的比较
Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology CT16G48C40U5.M8A1 16GB
Gold Key Technology Co Ltd NMUD480E82-3200D 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9905316-106.A02LF 1GB
Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB
Kingston ACR256X64D3S1333C9 2GB
Gold Key Technology Co Ltd NMUD480E82-3200D 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
G Skill Intl F4-2133C15-8GFX 8GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-2666C15-8GVB 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BL16G32C16S4B.M8FB1 16GB
AMD AE34G1601U1 4GB
Kingston HP26D4S9S8MH-8 8GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Kingston MSI24D4D4S8MB-8 8GB
Kingston KVR533D2N4 512MB
Chun Well Technology Holding Limited D4U0836144B 8GB
SK Hynix HYMP125U64CP8-S6 2GB
Corsair CM4X16GE2666C18S2 16GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Micron Technology 8ATF1G64HZ-2G3H1 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Chun Well Technology Holding Limited CL18-20-20 D4-3600
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMW32GX4M2C3466C16 16GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Mushkin MR[ABC]4U360JNNM16G 16GB
Samsung M393B5170FH0-CK0 4GB
Samsung M378A5143EB1-CPB 4GB
报告一个错误
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Bug description
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