Kingston ACR512X64D3S13C9G 4GB vs Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

总分

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

总分

Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

差异规格评论

差异

Kingston ACR512X64D3S13C9G 4GB

需要考虑的原因
Kingston ACR512X64D3S13C9G 4GB

报告一个错误

Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

需要考虑的原因
Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

报告一个错误

更快的读取速度，GB/s

20.6 11.5

测试中的平均数值
更快的写入速度，GB/s

18.4 8.5

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingston ACR512X64D3S13C9G 4GB

Thermaltake Technology Co Ltd RA24D408GX2-4400C19A 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 27
读取速度，GB/s

11.5 20.6
写入速度，GB/s

8.5 18.4
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1756 3826

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

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G Skill Intl F4-2400C17-8GSXW 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT4G4DFS824A.C8FE 4GB

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