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Kingston HP536727-H41-ELD 4GB
Hynix Semiconductor (Hyundai Electronics) HMT325S6EFR8A-PB 2GB

Kingston HP536727-H41-ELD 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT325S6EFR8A-PB 2GB

总分
star star star star star
Kingston HP536727-H41-ELD 4GB

Kingston HP536727-H41-ELD 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT325S6EFR8A-PB 2GB

Hynix Semiconductor (Hyundai Electronics) HMT325S6EFR8A-PB 2GB

差异 规格 评论

差异

Kingston HP536727-H41-ELD 4GB 需要考虑的原因
Kingston HP536727-H41-ELD 4GB
报告一个错误
Hynix Semiconductor (Hyundai Electronics) HMT325S6EFR8A-PB 2GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT325S6EFR8A-PB 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 51
    左右 -96% 更低的延时
  • 更快的读取速度，GB/s
    13.4 left arrow 11.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.5 left arrow 8.1
    测试中的平均数值

规格

完整的技术规格清单
Kingston HP536727-H41-ELD 4GB
Hynix Semiconductor (Hyundai Electronics) HMT325S6EFR8A-PB 2GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    51 left arrow 26
  • 读取速度，GB/s
    11.6 left arrow 13.4
  • 写入速度，GB/s
    8.1 left arrow 8.5
  • 内存带宽，mbps
    12800 left arrow 12800
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    1540 left arrow 1836

Kingston HP536727-H41-ELD 4GB RAM的比较

GIGA - BYTE Technology Co Ltd GP-ARS16G37 8GB

Hynix Semiconductor (Hyundai Electronics) HMT325S6EFR8A-PB 2GB RAM的比较

A-DATA Technology AD73I1B1672EG 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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