RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Kingston HX318C10FK/4 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
比较
Kingston HX318C10FK/4 4GB vs SK Hynix V-GeN D4H4GL26A8TL 4GB
总分
Kingston HX318C10FK/4 4GB
总分
SK Hynix V-GeN D4H4GL26A8TL 4GB
差异
规格
评论
差异
需要考虑的原因
Kingston HX318C10FK/4 4GB
报告一个错误
需要考虑的原因
SK Hynix V-GeN D4H4GL26A8TL 4GB
报告一个错误
低于PassMark测试中的延时,ns
68
69
左右 -1% 更低的延时
更快的读取速度,GB/s
16.2
6.1
测试中的平均数值
更快的写入速度,GB/s
8.1
4.1
测试中的平均数值
更高的内存带宽,mbps
19200
14900
左右 1.29 更高的带宽
规格
完整的技术规格清单
Kingston HX318C10FK/4 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
69
68
读取速度,GB/s
6.1
16.2
写入速度,GB/s
4.1
8.1
内存带宽,mbps
14900
19200
Other
描述
PC3-14900, 1.5V, CAS Supported: 5 6 7 8 9 10 11 13
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-10-9-28 / 1866 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1116
1812
Kingston HX318C10FK/4 4GB RAM的比较
Samsung M378B5173BH0-CH9 4GB
Kingston KHX1866C10D3/4G 4GB
SK Hynix V-GeN D4H4GL26A8TL 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston KP4T2F-PSB 4GB
Samsung M393A2G40DBD-CP1???? 16GB
A-DATA Technology DDR3 1600 4GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
Samsung M3 78T5663RZ3-CF7 2GB
G Skill Intl F4-3200C15-8GTZKO 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston LV26D4S9S8HJ-8 8GB
AMD R538G1601U2S-UO 8GB
Crucial Technology CT16G4DFRA266.M16FR 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-2400C15-8GFXR 8GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Patriot Memory (PDP Systems) PSD48G26662 8GB
Samsung M3 93T5750CZA-CE6 2GB
Teikon TMA851U6CJR6N-VKSC 4GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
G Skill Intl F4-2800C16-4GRK 4GB
Hexon Technology Pte Ltd HEXON 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
SK Hynix HYMP164U64CP6-Y5 512MB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
Samsung M471B5273CH0-CH9 4GB
Avant Technology J641GU49J2320NE 8GB
SK Hynix HMT325S6CFR8C-PB 2GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
报告一个错误
×
Bug description
Source link