Kingston K531R8-MIN 4GB vs Crucial Technology CT8G4DFRA32A.M4FF 8GB

总分

Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

总分

Crucial Technology CT8G4DFRA32A.M4FF 8GB

Crucial Technology CT8G4DFRA32A.M4FF 8GB

差异规格评论

差异

Kingston K531R8-MIN 4GB

需要考虑的原因
Kingston K531R8-MIN 4GB

报告一个错误

低于PassMark测试中的延时，ns

28 46

左右 39% 更低的延时

Crucial Technology CT8G4DFRA32A.M4FF 8GB

需要考虑的原因
Crucial Technology CT8G4DFRA32A.M4FF 8GB

报告一个错误

更快的读取速度，GB/s

20.6 13.4

测试中的平均数值
更快的写入速度，GB/s

13.2 9.0

测试中的平均数值
更高的内存带宽，mbps

25600 12800

左右 2 更高的带宽

规格

完整的技术规格清单

Kingston K531R8-MIN 4GB

Crucial Technology CT8G4DFRA32A.M4FF 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 46
读取速度，GB/s

13.4 20.6
写入速度，GB/s

9.0 13.2
内存带宽，mbps

12800 25600

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度

9-9-9-24 / 1600 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2445 2973

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B2G70BH0-CH9 16GB

G Skill Intl F4-3000C16-8GTRG 8GB

G Skill Intl F4-3000C16-8GTRG 8GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Golden Empire CL16-18-18 D4-3200 8GB

Golden Empire CL16-18-18 D4-3200 8GB

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

Kingmax Semiconductor GZOH23F-18---------- 16GB

Kingmax Semiconductor GZOH23F-18---------- 16GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Essencore Limited IM48GS88N26-JJJHA0 8GB

Essencore Limited IM48GS88N26-JJJHA0 8GB

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Kingston 9905471-002.A00LF 2GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N