Kingston KHX2133C11D3/4GX 4GB vs Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

总分

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

总分

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

差异规格评论

差异

Kingston KHX2133C11D3/4GX 4GB

需要考虑的原因
Kingston KHX2133C11D3/4GX 4GB

报告一个错误

低于PassMark测试中的延时，ns

37 71

左右 48% 更低的延时
更快的写入速度，GB/s

10.1 8.3

测试中的平均数值

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingston KHX2133C11D3/4GX 4GB

Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

37 71
读取速度，GB/s

15.5 15.5
写入速度，GB/s

10.1 8.3
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2595 1902

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F3-2400C11-8GSR 8GB

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Corsair CMV8GX3M1A1333C9 8GB

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A-DATA Technology DDR3 1600 4GB

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SK Hynix HMA82GU6DJR8N-XN 16GB

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Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Heoriady M471A1K43BB1-CRC 16GB

Heoriady M471A1K43BB1-CRC 16GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

A-DATA Technology AO1P26KCST2-BWWS 16GB

A-DATA Technology AO1P26KCST2-BWWS 16GB

Kingston 9905584-016.A00LF 4GB

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G Skill Intl F4-3600C17-16GTZSW 16GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Corsair CMK32GX4M4A2666C15 8GB

Corsair CMK32GX4M4A2666C15 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Team Group Inc. TEAMGROUP-SD4-2400 16GB

Team Group Inc. TEAMGROUP-SD4-2400 16GB