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Kingston KHX2400C11D3/4GX 4GB
Lexar Co Limited LD4AS016G-H2666G 16GB

Kingston KHX2400C11D3/4GX 4GB vs Lexar Co Limited LD4AS016G-H2666G 16GB

总分
star star star star star
Kingston KHX2400C11D3/4GX 4GB

Kingston KHX2400C11D3/4GX 4GB

总分
star star star star star
Lexar Co Limited LD4AS016G-H2666G 16GB

Lexar Co Limited LD4AS016G-H2666G 16GB

差异 规格 评论

差异

Kingston KHX2400C11D3/4GX 4GB 需要考虑的原因
Kingston KHX2400C11D3/4GX 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 37
    左右 5% 更低的延时
  • 更快的读取速度，GB/s
    16.2 left arrow 13
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.7 left arrow 7.9
    测试中的平均数值
Lexar Co Limited LD4AS016G-H2666G 16GB 需要考虑的原因
Lexar Co Limited LD4AS016G-H2666G 16GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Kingston KHX2400C11D3/4GX 4GB
Lexar Co Limited LD4AS016G-H2666G 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 37
  • 读取速度，GB/s
    16.2 left arrow 13.0
  • 写入速度，GB/s
    10.7 left arrow 7.9
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2726 left arrow 2512

Kingston KHX2400C11D3/4GX 4GB RAM的比较

Kingston KHX1866C10D3/4G 4GB
Crucial Technology BLT8G3D1608DT1TX0. 8GB

Lexar Co Limited LD4AS016G-H2666G 16GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Samsung M378B5673EH1-CF8 2GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Kingston 99U5403-036.A00G 4GB
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G Skill Intl F4-4000C18-16GTZN 16GB
内存RAM