Kingston KHX3200C18D4/8G 8GB vs Crucial Technology BLS4G4D240FSB.M8FBD 4GB

总分

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

总分

Crucial Technology BLS4G4D240FSB.M8FBD 4GB

Crucial Technology BLS4G4D240FSB.M8FBD 4GB

差异规格评论

差异

Kingston KHX3200C18D4/8G 8GB

需要考虑的原因
Kingston KHX3200C18D4/8G 8GB

报告一个错误

更快的读取速度，GB/s

18.2 17.6

测试中的平均数值
更快的写入速度，GB/s

14.9 12.9

测试中的平均数值
更高的内存带宽，mbps

25600 19200

左右 1.33% 更高的带宽

Crucial Technology BLS4G4D240FSB.M8FBD 4GB

需要考虑的原因
Crucial Technology BLS4G4D240FSB.M8FBD 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 28

左右 -27% 更低的延时

规格

完整的技术规格清单

Kingston KHX3200C18D4/8G 8GB

Crucial Technology BLS4G4D240FSB.M8FBD 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

28 22
读取速度，GB/s

18.2 17.6
写入速度，GB/s

14.9 12.9
内存带宽，mbps

25600 19200

Other

描述

PC4-25600, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3501 2728

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 9905622-057.A00G 4GB

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Samsung M378B5173BH0-CH9 4GB

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Gloway International (HK) STK2400C15-16GB 16GB

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AMD AE34G1601U1 4GB

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Samsung M3 78T2863QZS-CF7 1GB

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Corsair CM2X1024-8500C5D 1GB

Corsair CM2X1024-8500C5D 1GB

Super Talent F24UB16GV 16GB

Super Talent F24UB16GV 16GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

G Skill Intl F4-2666C19-16GRS 16GB

G Skill Intl F4-2666C19-16GRS 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Micron Technology 8ATF1G64HZ-2G3A1 8GB

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Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB