Kingston KVR533D2N4 512MB vs Panram International Corporation M424016 4GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

Panram International Corporation M424016 4GB

Panram International Corporation M424016 4GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

Panram International Corporation M424016 4GB

需要考虑的原因
Panram International Corporation M424016 4GB

报告一个错误

低于PassMark测试中的延时，ns

31 75

左右 -142% 更低的延时
更快的读取速度，GB/s

12.6 1

测试中的平均数值
更快的写入速度，GB/s

9.9 1,672.1

测试中的平均数值
更高的内存带宽，mbps

19200 4200

左右 4.57 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

Panram International Corporation M424016 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 31
读取速度，GB/s

1,943.5 12.6
写入速度，GB/s

1,672.1 9.9
内存带宽，mbps

4200 19200

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

4-4-4-12 / 533 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

301 2035

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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V-GEN D4R8GL24A8R 8GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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Corsair CMU32GX4M4A2666C16 8GB

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Corsair CMD8GX3M2A2933C12 4GB

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Micron Technology 18ASF2G72AZ-2G1A1 16GB

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Smart Modular SF4641G8CKHI6DFSDS 8GB

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Essencore Limited KD48GU88C-26N1600 8GB

G Skill Intl F4-2133C15-4GRK 4GB

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Micron Technology 8ATF51264AZ-2G1A2 4GB

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Netac Technology Co Ltd EKBLUE4162417AD 8GB

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