RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Kingston KVR800D2N6/2G 2GB
Smart Modular SMU4WEC8C1K0464FCG 8GB

Kingston KVR800D2N6/2G 2GB vs Smart Modular SMU4WEC8C1K0464FCG 8GB

总分
star star star star star
Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

总分
star star star star star
Smart Modular SMU4WEC8C1K0464FCG 8GB

Smart Modular SMU4WEC8C1K0464FCG 8GB

差异 规格 评论

差异

Kingston KVR800D2N6/2G 2GB 需要考虑的原因
Kingston KVR800D2N6/2G 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 17
    测试中的平均数值
Smart Modular SMU4WEC8C1K0464FCG 8GB 需要考虑的原因
Smart Modular SMU4WEC8C1K0464FCG 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 50
    左右 -85% 更低的延时
  • 更快的写入速度，GB/s
    13.3 left arrow 1,905.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 6400
    左右 4 更高的带宽

规格

完整的技术规格清单
Kingston KVR800D2N6/2G 2GB
Smart Modular SMU4WEC8C1K0464FCG 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    50 left arrow 27
  • 读取速度，GB/s
    5,143.3 left arrow 17.0
  • 写入速度，GB/s
    1,905.1 left arrow 13.3
  • 内存带宽，mbps
    6400 left arrow 25600
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    855 left arrow 3296

Kingston KVR800D2N6/2G 2GB RAM的比较

Kingmax Semiconductor KLDE88F-B8MO5 2GB
Samsung M378B5673FH0-CH9 2GB

Smart Modular SMU4WEC8C1K0464FCG 8GB RAM的比较

Crucial Technology BLT16G4D30AETA.K16FB 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Apacer Technology 78.CAGNK.4040B 8GB
Apacer Technology 78.CAGNK.4040B 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
G Skill Intl F4-4266C17-8GTZRB 8GB
G Skill Intl F4-4266C17-8GTZRB 8GB
内存RAM
Kingston KVR800D2N6/2G 2GB
Kingston KVR800D2N6/2G 2GB
Smart Modular SMU4WEC8C1K0464FCG 8GB
Smart Modular SMU4WEC8C1K0464FCG 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Wilk Elektronik S.A. GR2133D464L15S/4G 4GB
Wilk Elektronik S.A. GR2133D464L15S/4G 4GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
Kingston XJ69DF-HYA 8GB
Kingston XJ69DF-HYA 8GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Crucial Technology CT16G4SFD832A.M16FRS 16GB
Crucial Technology CT16G4SFD832A.M16FRS 16GB
内存RAM
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Golden Empire CL15-15-15 D4-2133 8GB
Golden Empire CL15-15-15 D4-2133 8GB
内存RAM
Kingston KP4T2F-PSB 4GB
Kingston KP4T2F-PSB 4GB
G Skill Intl F4-3200C16-32GTZN 32GB
G Skill Intl F4-3200C16-32GTZN 32GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Chun Well Technology Holding Limited MD4U0836165BCW 8GB
Chun Well Technology Holding Limited MD4U0836165BCW 8GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Crucial Technology BL8G32C16U4BL.M8FE1 8GB
Crucial Technology BL8G32C16U4BL.M8FE1 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Kingston X5H5PW-MIB 8GB
Kingston X5H5PW-MIB 8GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
内存RAM