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Kreton Corporation 51624xxxx68x35xxxx 2GB
Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB vs Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

总分
star star star star star
Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

总分
star star star star star
Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

差异 规格 评论

差异

Kreton Corporation 51624xxxx68x35xxxx 2GB 需要考虑的原因
Kreton Corporation 51624xxxx68x35xxxx 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 15.6
    测试中的平均数值
Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB 需要考虑的原因
Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 59
    左右 -97% 更低的延时
  • 更快的写入速度，GB/s
    10.4 left arrow 1,855.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Kreton Corporation 51624xxxx68x35xxxx 2GB
Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    59 left arrow 30
  • 读取速度，GB/s
    4,168.0 left arrow 15.6
  • 写入速度，GB/s
    1,855.7 left arrow 10.4
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 12 14 15
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    680 left arrow 2688

Kreton Corporation 51624xxxx68x35xxxx 2GB RAM的比较

Samsung M395T5663QZ4-CE66 1GB
Qimonda 72T256521EFD3SC2 2GB

Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB RAM的比较

Kingston 9905471-002.A00LF 2GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Corsair CMD64GX4M8A2800C16 8GB
Corsair CMD64GX4M8A2800C16 8GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB
Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Transcend Information JM3200HLB-8G 8GB
Transcend Information JM3200HLB-8G 8GB
内存RAM
Kingston 9905471-076.A00LF 8GB
Kingston 9905471-076.A00LF 8GB
Crucial Technology BLS16G4S26BFSD.16FD 16GB
Crucial Technology BLS16G4S26BFSD.16FD 16GB
内存RAM
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Teikon TMA81GS6AFR8N-UHSC 8GB
Teikon TMA81GS6AFR8N-UHSC 8GB
内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Kingston KHX3200C16D4/32GX 32GB
Kingston KHX3200C16D4/32GX 32GB
内存RAM
Apacer Technology 78.B1GET.AU00C 4GB
Apacer Technology 78.B1GET.AU00C 4GB
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology CT8G4SFS8213.M8FB 8GB
Crucial Technology CT8G4SFS8213.M8FB 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-4600C18-8GTZR 8GB
G Skill Intl F4-4600C18-8GTZR 8GB
内存RAM
Micron Technology 8JSF25664HZ-1G4D1 2GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Corsair CMD64GX4M4A2666C15 16GB
Corsair CMD64GX4M4A2666C15 16GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3600C19-16GSXKB 16GB
G Skill Intl F4-3600C19-16GSXKB 16GB
内存RAM
Kingston ACR16D3LS1KBG/8G 8GB
Kingston ACR16D3LS1KBG/8G 8GB
Smart Modular SMS4WEC8C2K0446FCG 16GB
Smart Modular SMS4WEC8C2K0446FCG 16GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Crucial Technology BLS8G4D32AESBK.M8FE1 8GB
Crucial Technology BLS8G4D32AESBK.M8FE1 8GB
内存RAM