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Kreton Corporation 51624xxxx68x35xxxx 2GB
Corsair CMW32GX4M4D3600C18 8GB
比较
Kreton Corporation 51624xxxx68x35xxxx 2GB vs Corsair CMW32GX4M4D3600C18 8GB
总分
Kreton Corporation 51624xxxx68x35xxxx 2GB
总分
Corsair CMW32GX4M4D3600C18 8GB
差异
规格
评论
差异
需要考虑的原因
Kreton Corporation 51624xxxx68x35xxxx 2GB
报告一个错误
更快的读取速度,GB/s
4
18.3
测试中的平均数值
需要考虑的原因
Corsair CMW32GX4M4D3600C18 8GB
报告一个错误
低于PassMark测试中的延时,ns
28
59
左右 -111% 更低的延时
更快的写入速度,GB/s
15.8
1,855.7
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Kreton Corporation 51624xxxx68x35xxxx 2GB
Corsair CMW32GX4M4D3600C18 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
59
28
读取速度,GB/s
4,168.0
18.3
写入速度,GB/s
1,855.7
15.8
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
680
3736
Kreton Corporation 51624xxxx68x35xxxx 2GB RAM的比较
Samsung M395T5663QZ4-CE66 1GB
Qimonda 72T256521EFD3SC2 2GB
Corsair CMW32GX4M4D3600C18 8GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK16GX4M2D3000C16 8GB
Samsung M471B5674QH0-YK0 2GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
SK Hynix HMAA2GU6AJR8N-XN 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
A-DATA Technology AX4S2800316G18-B 16GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CMK32GX4M4B3600C18 8GB
Kingston 99U5471-056.A00LF 8GB
A-DATA Technology AX4S2800316G18-B 16GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Crucial Technology BL16G36C16U4W.M8FB1 16GB
Corsair VS1GB800D2 1GB
G Skill Intl F4-3600C16-8GTZ 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston KHX2666C15S4/8G 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BLS8G4D26BFSC.16FBD2 8GB
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-3000C16-8GVSB 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT8G4DFS832A.M8FJ 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
Kingston K9CXF2-MIE 8GB
Samsung M4 70T2864QZ3-CF7 1GB
Patriot Memory (PDP Systems) PSD48G21332 8GB
报告一个错误
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Bug description
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