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Micron Technology 16ATF1G64AZ-2G1B1 8GB
Samsung M378A5143EB1-CPB 4GB

Micron Technology 16ATF1G64AZ-2G1B1 8GB vs Samsung M378A5143EB1-CPB 4GB

总分
star star star star star
Micron Technology 16ATF1G64AZ-2G1B1 8GB

Micron Technology 16ATF1G64AZ-2G1B1 8GB

总分
star star star star star
Samsung M378A5143EB1-CPB 4GB

Samsung M378A5143EB1-CPB 4GB

差异 规格 评论

差异

Micron Technology 16ATF1G64AZ-2G1B1 8GB 需要考虑的原因
Micron Technology 16ATF1G64AZ-2G1B1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 38
    左右 3% 更低的延时
  • 更快的读取速度，GB/s
    14.7 left arrow 14.6
    测试中的平均数值
Samsung M378A5143EB1-CPB 4GB 需要考虑的原因
Samsung M378A5143EB1-CPB 4GB
报告一个错误
  • 更快的写入速度，GB/s
    10.8 left arrow 10.6
    测试中的平均数值

规格

完整的技术规格清单
Micron Technology 16ATF1G64AZ-2G1B1 8GB
Samsung M378A5143EB1-CPB 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    37 left arrow 38
  • 读取速度，GB/s
    14.7 left arrow 14.6
  • 写入速度，GB/s
    10.6 left arrow 10.8
  • 内存带宽，mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2592 left arrow 2298

Micron Technology 16ATF1G64AZ-2G1B1 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905403-156.A00LF 2GB

Samsung M378A5143EB1-CPB 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HYMP112U64CP8-S5 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Kingmax Semiconductor FLFE85F-C8KM9 2GB
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SK Hynix HMA84GR7JJR4N-VK 32GB
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